Photothermal and optical characterization of Te-doped GaSb

E-ISSN： 1764-7177|125|issue|371-374

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.125, Iss.issue, 2005-06, pp. : 371-374

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Photoluminescence characterization of Te-doped GaSb/AlSb superlattices

By Ru G. Li A. Zheng Y. Shen W.

Superlattices and Microstructures, Vol. 23, Iss. 1, 1998-01 ,pp. : 29-33

Academic Press

Access to resources Recommend Favorite

Nature of defects in heavily Te-doped GaAs

Revue de Physique Appliquée (Paris), Vol. 18, Iss. 8, 1983-08 ,pp. : 475-478

Edp Sciences

Access to resources Recommend Favorite

Raman characterization of theIn$_{0.14}$Ga$_{0.86}$As$_{0.13}$Sb$_{0.87}$ highly doped with Tegrown on GaSb by liquid phase epitaxy

Le Journal de Physique IV, Vol. 132, Iss. issue, 2006-03 ,pp. : 211-214

Edp Sciences

Access to resources Recommend Favorite

OPTICAL OBSERVATION OF THE MAGNETIC FREEZEOUT EFFECT IN GaSb

Le Journal de Physique Colloques, Vol. 35, Iss. C3, 1974-04 ,pp. : C3-215-C3-221

Edp Sciences

Access to resources Recommend Favorite

KONDO EFFECT IN InSb AND GaAs DOPED WITH NONMAGNETIC IMPURITIES (Te)

Le Journal de Physique Colloques, Vol. 39, Iss. C6, 1978-08 ,pp. : C6-850-C6-851

Edp Sciences

Access to resources Recommend Favorite