Publisher: Edp Sciences
E-ISSN: 1764-7177|132|issue|221-224
ISSN: 1155-4339
Source: Le Journal de Physique IV, Vol.132, Iss.issue, 2006-03, pp. : 221-224
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
GaN, AlGaN, HfO2 based radial heterostructure nanowires
Journal of Physics: Conference Series , Vol. 209, Iss. 1, 2010-02 ,pp. :
GaN film growth on LiNbO3 surfaces using molecular beam epitaxy
Journal of Physics: Conference Series , Vol. 187, Iss. 1, 2009-09 ,pp. :