Stress evolution during growth of GaN (0001)/Al2O3(0001) by reactive dc magnetron sputter epitaxy

Author: Junaid M   Sandström P   Palisaitis J   Darakchieva V   Hsiao C-L   Persson P O Å   Hultman L   Birch J  

Publisher: IOP Publishing

ISSN: 0022-3727

Source: Journal of Physics D: Applied Physics, Vol.47, Iss.14, 2014-04, pp. : 145301-145308

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