Epitaxial growth of silicon and germanium on (100)-oriented crystalline substrates by RF PECVD at 175 °C

Author： Labrune M.   Bril X.   Patriarche G.   Largeau L.   Mauguin O.   Roca i Cabarrocas P.  

Publisher： Edp Sciences

E-ISSN： 2105-0716|3|issue|30303-30303

ISSN： 2105-0716

Source： EPJ Photovoltaics, Vol.3, Iss.issue, 2012-11, pp. : 30303-30303

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