Grown-in vacancy-type defects in poly- and single crystalline silicon investigated by positron annihilation

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EPJ Applied Physics (The), Vol. 37, Iss. 2, 2007-01 ,pp. : 213-218

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Positron Annihilation Spectroscopy to Characterize Irradiation Induced Vacancy Type Defects in Materials for Nuclear Fission and Fusion

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EPJ Web of Conference, Vol. 115, Iss. issue, 2016-04 ,pp. : 03004-03004

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Formation of anti-site defects and bismuth overstoichiometry in p-type Sb_2−xBi_xTe₃ thermoelectric crystals

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EPJ Applied Physics (The), Vol. 42, Iss. 2, 2008-03 ,pp. : 67-73

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First-principle study on the effects of electric field and anisotropic oxygen vacancy on dielectric properties of rutile titanium dioxide

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On the ab initio calculation of vibrational formation entropy of point defect: the case of the silicon vacancy

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EPJ Photovoltaics, Vol. 8, Iss. issue, 2017-08 ,pp. : 85505-85505

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