Effect of Al Sputtering Current on Structure of CrAlN Thin Films Prepared by Reactive DC Magnetron Co-Sputtering

Publisher: Trans Tech Publications

E-ISSN: 1662-7482|2017|866|322-325

ISSN: 1660-9336

Source: Applied Mechanics and Materials, Vol.2017, Iss.866, 2017-07, pp. : 322-325

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Abstract

Chromium aluminium nitride (CrAlN) thin films were deposited on Si by reactive DC magnetron co-sputtering technique. The effect of Al sputtering current (IAl) on the crystal structure, elemental composition, thickness, microstructure and hardness were determined by XRD, EDS, AFM and FE-SEM and Nanoindentation, respectively. The results showed that, the as-deposited films were formed as a (Cr,Al)N solid solution with low Al sputtering current, whereas the amorphous structure can be found at high Al sputtering current. The film thickness and roughness was in range of 347 - 1047 nm and 1.45 - 3.37 nm, respectively. The elemental composition of the films varied with the Al sputtering current. The FE-SEM results indicated that the simultaneous evolution in grain refinement with cross-section microstructure through the Al sputtering current. The film hardness increased from 36 GPa to 46 GPa with increasing of Al contents.