Vacancy-Type Defects in GaN for Power Devices Probed by Positron Annihilation

Publisher： Trans Tech Publications

E-ISSN： 1662-9507|2017|373|183-188

ISSN： 1012-0386

Source： Defect and Diffusion Forum, Vol.2017, Iss.373, 2017-04, pp. : 183-188

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

The Evolution Behavior of Defects in the Nanofilms of W/Cu and W Probed by Doppler Broadening Positron Annihilation Spectroscopy

By  

Defect and Diffusion Forum, Vol. 2017, Iss. 373, 2017-04 ,pp. : 104-107

Trans Tech Publications

Access to resources Recommend Favorite

Investigations of Critical Structural Defects in Active Layers of GaN-on-Si for Power Electronic Devices

By  

Solid State Phenomena, Vol. 2015, Iss. 242, 2016-02 ,pp. : 417-5

Trans Tech Publications

Access to resources Recommend Favorite

Investigation of Defects in Hydrogen-Saturated Titanium by Means of Positron Annihilation Techniques

By  

Defect and Diffusion Forum, Vol. 2015, Iss. 365, 2015-08 ,pp. : 232-236

Trans Tech Publications

Access to resources Recommend Favorite

Investigation of Hydrogen Sorption-Desorption Processes at Gas-Phase Hydrogenation and Defects Formation in Titanium by Means of Electron-Positron Annihilation Techniques

By  

Defect and Diffusion Forum, Vol. 2017, Iss. 373, 2017-04 ,pp. : 317-323

Trans Tech Publications

Access to resources Recommend Favorite

Microstructure and Defects of MgO/ZrO2 Nanocrystals Investigated by Positron Annihilation Spectroscopy

By  

Defect and Diffusion Forum, Vol. 2017, Iss. 373, 2017-04 ,pp. : 249-253

Trans Tech Publications

Access to resources Recommend Favorite