Influence of Interface Traps on the Electrical Properties of Oxide Thin-Film Transistors with Different Channel Thicknesses

Publisher： Trans Tech Publications

E-ISSN： 1661-9897|2017|46|93-99

ISSN： 1662-5250

Source： Journal of Nano Research, Vol.2017, Iss.46, 2017-04, pp. : 93-99

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Electrical in‐situ characterisation of interface stabilised organic thin‐film transistors

By  

PHYSICA STATUS SOLIDI - RAPID RESEARCH LETTERS (ELECTRONIC), Vol. 9, Iss. 7, 2015-07 ,pp. : 420-424

John Wiley & Sons Inc

Access to resources Recommend Favorite

Ultra‐Flexible, “Invisible” Thin‐Film Transistors Enabled by Amorphous Metal Oxide/Polymer Channel Layer Blends

By  

ADVANCED MATERIALS, Vol. 27, Iss. 14, 2015-04 ,pp. : 2390-2399

John Wiley & Sons Inc

Access to resources Recommend Favorite

Study of the electrical properties of thin film transistors based on nickel phthalocyanine

By Guillaud G.   Ben Chaabane R.   Gamoundi M.  

Thin Solid Films, Vol. 296, Iss. 1, 1997-03 ,pp. : 145-147

Elsevier

Access to resources Recommend Favorite

Silicon for thin-film transistors

By Wagner S.   Gleskova H.   Cheng I.-C.   Wu M.  

Thin Solid Films, Vol. 430, Iss. 1, 2003-04 ,pp. : 15-19

Elsevier

Access to resources Recommend Favorite

Skin‐Like Oxide Thin‐Film Transistors for Transparent Displays

By  

ADVANCED FUNCTIONAL MATERIALS, Vol. 26, Iss. 34, 2016-09 ,pp. : 6170-6178

John Wiley & Sons Inc

Access to resources Recommend Favorite