Author： Wagner S. Gleskova H. Cheng I.-C. Wu M.
Publisher： Elsevier
ISSN： 0040-6090
Source： Thin Solid Films, Vol.430, Iss.1, 2003-04, pp. : 15-19
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Access to resources
Recommend
Hot-wire silicon nitride for thin-film transistors
By Stannowski B. Rath J.K. Schropp R.E.I.
Thin Solid Films, Vol. 395, Iss. 1, 2001-09 ,pp. :
Origin of low frequency noise in polycrystalline silicon thin-film transistors
By Dimitriadis C.A. Brini J. Kamarinos G.
Thin Solid Films, Vol. 427, Iss. 1, 2003-03 ,pp. :
Polycrystalline silicon thin-film transistors: A continuous evolving technology
By Fortunato G.
Thin Solid Films, Vol. 296, Iss. 1, 1997-03 ,pp. :