Publisher： Trans Tech Publications
E-ISSN： 1662-9752|2017|897|275-278
ISSN： 0255-5476
Source： Materials Science Forum, Vol.2017, Iss.897, 2017-06, pp. : 275-278
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
ESR Study on Hydrogen Passivation of Intrinsic Defects in p-Type and Semi-Insulating 4H-SiC
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :
Access to resources
Recommend
Fluorescent P-Type 4H-SiC Grown by PVT Method
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :
Comparative Study of n-Type 4H-SiC: Raman vs Photoluminescence Spectroscopy
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
Optical Characterization of p-Type 4H-SiC Epilayers
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
Two-Dimensional Carrier Profiling on Lightly Doped n-Type 4H-SiC Epitaxially Grown Layers
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :