Effect of Neutron Irradiation on Epitaxial 4H-SiC PiN UV-Photodiodes

Publisher： Trans Tech Publications

E-ISSN： 1662-9752|2017|897|614-617

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2017, Iss.897, 2017-06, pp. : 614-617

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

4H-SiC P+N UV Photodiodes for Space Applications

By  

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 644-647

Trans Tech Publications

Access to resources Recommend Favorite

DLTS Study on Al+ Ion Implanted and 1950°C Annealed p-i-n 4H-SiC Vertical Diodes

By  

Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 279-282

Trans Tech Publications

Access to resources Recommend Favorite

Ion Implanted Lateral p+-i-n+ Diodes on HPSI 4H-SiC

By  

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 620-623

Trans Tech Publications

Access to resources Recommend Favorite

Improvement of 4H-SiC Epitaxial Layers Grown on 2o Offcut Si-Face Substrates

By  

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 133-136

Trans Tech Publications

Access to resources Recommend Favorite

Temperature Dependence of Minority Carrier Lifetime in Epitaxially Grown p+-p–-n+ 4H-SiC Drift Step Recovery Diodes

By  

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 632-635

Trans Tech Publications

Access to resources Recommend Favorite