Conductance Signal from Near-Interface Traps in n-Type 4H-SiC MOS Capacitors under Strong Accumulation

Publisher： Trans Tech Publications

E-ISSN： 1662-9752|2017|897|147-150

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2017, Iss.897, 2017-06, pp. : 147-150

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