Influence of Annealing, Oxidation and Doping on Conduction-Band near Interface Traps in 4H-SiC Characterized by Low Temperature Conductance Measurements

Publisher： Trans Tech Publications

E-ISSN： 1662-9752|2015|821|476-479

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2015, Iss.821, 2015-07, pp. : 476-479

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Low Density of Near-Interface Traps at the Al2O3/4H-SiC Interface with Al2O3 Made by Low Temperature Oxidation of Al

By  

Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 135-138

Trans Tech Publications

Access to resources Recommend Favorite

Conductance Signal from Near-Interface Traps in n-Type 4H-SiC MOS Capacitors under Strong Accumulation

By  

Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 147-150

Trans Tech Publications

Access to resources Recommend Favorite

Pragmatic Approach to the Characterization of SiC/SiO2 Interface Traps near the Conduction Band with Split C-V and Hall Measurements

By  

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 477-480

Trans Tech Publications

Access to resources Recommend Favorite

Quantified Density of Active near Interface Oxide Traps in 4H-SiC MOS Capacitors

By  

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 603-606

Trans Tech Publications

Access to resources Recommend Favorite

Improving Interface Quality of 4H-SiC MOS Devices with High Temperature Oxidation Process in Mass Produce Furnace

By  

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 484-487

Trans Tech Publications

Access to resources Recommend Favorite