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Dislocation Revelation and Categorization for Thick Free-Standing GaN Substrates Grown by HVPE

Publisher： Trans Tech Publications

E-ISSN： 1662-9752|2017|897|707-710

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2017, Iss.897, 2017-06, pp. : 707-710

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

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Abstract

Threading dislocations (TDs) in an HVPE-grown free-standing GaN substrate have been studied by means of etch pit method using molten KOH+Na₂O₂ solution, cathodoluminescence (CL) mapping and transmission electron microscopy (TEM). We have focused on the correlation between (1) Burgers vectors of TDs, (2) their appearances as dark spots in CL image, and (3) geometries of corresponding etch pits. Based on the above results, dislocation categorization for GaN by using etch pits or CL is discussed.

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