Publisher： Trans Tech Publications
E-ISSN： 1662-9752|2017|897|379-382
ISSN： 0255-5476
Source： Materials Science Forum, Vol.2017, Iss.897, 2017-06, pp. : 379-382
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Access to resources
Recommend
4H-SiC n-Channel DMOS IGBTs on (0001) and (000-1) Oriented Lightly Doped Free-Standing Substrates
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :
Two-Dimensional Carrier Profiling on Lightly Doped n-Type 4H-SiC Epitaxially Grown Layers
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
Mapping of Threading Screw Dislocations in 4H n-Type SiC Wafers
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :
Comparative Study of p-Type 4H-SiC Grown on n-Type and Semi Insulating 4H-SiC Substrates
Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. :