Publisher: Trans Tech Publications
E-ISSN: 1662-9752|2017|897|51-54
ISSN: 0255-5476
Source: Materials Science Forum, Vol.2017, Iss.897, 2017-06, pp. : 51-54
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Influence of n-Type Doping Levels on Carrier Lifetime in 4H-SiC Epitaxial Layers
Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. :
Investigation of Aluminum Incorporation in 4H-SiC Epitaxial Layers
Materials Science Forum, Vol. 2014, Iss. 806, 2015-01 ,pp. :
p-Type Doping of 4H- and 3C-SiC Epitaxial Layers with Aluminum
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :
Effect of C/Si Ratio and Nitrogen Doping on 4H-SiC Epitaxial Growth Using Dichlorosilane Precursor
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :