Plasma processed ultra-thin SiO 2 interfaces for advanced silicon NMOS and PMOS devices: applications to Si-oxide/Si oxynitride, Si-oxide/Si nitride and Si-oxide/transition metal oxide stacked gate dielectrics

By Lucovsky G.   Yang H.   Wu Y.   Niimi H.  

Thin Solid Films, Vol. 374, Iss. 2, 2000-10 ,pp. : 217-227

Elsevier

Access to resources Recommend Favorite

Time Resolved Gate Oxide Stress of 4H-SiC Planar MOSFETs and NMOS Capacitors

By  

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 611-614

Trans Tech Publications

Access to resources Recommend Favorite

Improvement of the Current Gain Stability of SiC Junction Transistors

By  

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 822-825

Trans Tech Publications

Access to resources Recommend Favorite

Electrical Characterization of Epitaxial Graphene Field-Effect Transistors with High-k Al₂O₃ Gate Dielectric Fabricated on SiC Substrates

By  

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 937-940

Trans Tech Publications

Access to resources Recommend Favorite

Distribution of Secondary Defects and Electrical Activation after Annealing of Al-Implanted SiC

By  

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 407-410

Trans Tech Publications

Access to resources Recommend Favorite