Publisher: Trans Tech Publications
E-ISSN: 1662-9752|2017|897|242-245
ISSN: 0255-5476
Source: Materials Science Forum, Vol.2017, Iss.897, 2017-06, pp. : 242-245
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
4H-SiC Growth from Si-Cr-C Solution under Al and N Co-Doping Conditions
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
A New 1200V SiC MPS Diode with Improved Performance and Ruggedness
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
A New Type of Single Carrier Conduction Rectifier on SiC
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :