Publisher： Trans Tech Publications
E-ISSN： 1662-9752|2015|821|9-13
ISSN： 0255-5476
Source： Materials Science Forum, Vol.2015, Iss.821, 2015-07, pp. : 9-13
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Abstract
We have investigated the solution growth under various Al-N co-doping conditions. Both p-type and n-type 4H-SiC were successfully grown under Al-N co-doping conditions, while using the effect of Al-addition to stabilize both growth surface and polytype. The doping and electrical properties were investigated systematically. Interaction between Al and N in the incorporation process and electrical property under heavily co-doped conditions were discussed.
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