Publisher: Trans Tech Publications
E-ISSN: 1662-9752|2015|821|9-13
ISSN: 0255-5476
Source: Materials Science Forum, Vol.2015, Iss.821, 2015-07, pp. : 9-13
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Bulk Growth of Low Resistivity n-Type 4H-SiC Using Co-Doping
Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. :
Al Doping from Laser Irradiated Al Film Deposited on 4H-SiC
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :
Effect of C/Si Ratio and Nitrogen Doping on 4H-SiC Epitaxial Growth Using Dichlorosilane Precursor
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :