Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique

Author: Wu Chi-Chang   You Hsin-Chiang   Lin Yu-Hsien   Yang Chia-Jung   Hsiao Yu-Ping   Liao Tun-Po   Yang Wen-Luh  

Publisher: MDPI

E-ISSN: 1996-1944|11|2|265-265

ISSN: 1996-1944

Source: Materials, Vol.11, Iss.2, 2018-02, pp. : 265-265

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Abstract