High Power Self-Aligned, Trench-Implanted 4H-SiC JFETs

Author: Vamvoukakis K.  

Publisher: Edp Sciences

E-ISSN: 2267-1242|16|issue|12001-12001

ISSN: 2267-1242

Source: E3S Web of conferences, Vol.16, Iss.issue, 2017-05, pp. : 12001-12001

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Abstract