Immobilization Phenomenon of Partials Surrounding Double Shockley Stacking Faults in Heavily Nitrogen Doped 4H-SiC Crystal with Thermal Anneal

Publisher： Trans Tech Publications

E-ISSN： 1662-9752|2018|924|160-163

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2018, Iss.924, 2018-07, pp. : 160-163

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