Effect of Post Oxide Annealing on the Electrical and Interface 4H-SiC/Al₂O₃ MOS Capacitors

E-ISSN： 1662-9752|2018|924|486-489

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2018, Iss.924, 2018-07, pp. : 486-489

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