Analysis of 3-Dimensional 4H-SiC MOS Capacitors Grown by Atomic Layer Deposition of Al₂O₃

E-ISSN： 1662-9752|2018|924|490-493

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2018, Iss.924, 2018-07, pp. : 490-493

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Effect of Post Oxide Annealing on the Electrical and Interface 4H-SiC/Al₂O₃ MOS Capacitors

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 486-489

Trans Tech Publications

Access to resources Recommend Favorite

MOCVD Compatible Atomic Layer Deposition Process of Al₂O₃ on SiC and Graphene/SiC Heterostructures

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 506-510

Trans Tech Publications

Access to resources Recommend Favorite

Temperature-Dependence Study of the Gate Current SiO₂/4H-SiC MOS Capacitors

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 473-476

Trans Tech Publications

Access to resources Recommend Favorite

Influence of Compaction Pressure on Density, Bending Strength, and Microstructures of Al₂O₃-SiC-ZrO₂ Ceramic Matrix Composites with Nb₂O₅ Additives

Materials Science Forum, Vol. 2018, Iss. 923, 2018-06 ,pp. : 61-65

Trans Tech Publications

Access to resources Recommend Favorite

Improvement of SiO₂/4H-SiC(0001) Interface Properties by H₂ and Ar Mixture Gas Treatment Prior to SiO₂ Deposition

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 461-464

Trans Tech Publications

Access to resources Recommend Favorite