Oxide Traps Probed by Transient Capacitance Measurements on Lateral SiO₂/4H-SiC MOSFETs

E-ISSN： 1662-9752|2018|924|285-288

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2018, Iss.924, 2018-07, pp. : 285-288

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Effect of High Temperature Forming Gas Annealing on Electrical Properties of 4H-SiC Lateral MOSFETs with Lanthanum Silicate and ALD SiO₂ Gate Dielectric

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 482-485

Trans Tech Publications

Access to resources Recommend Favorite

Improved Threshold Voltage Instability in 4H-SiC MOSFETs with Atomic Layer Deposited SiO₂

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 498-501

Trans Tech Publications

Access to resources Recommend Favorite

Improvement of Local Deep Level Transient Spectroscopy for Microscopic Evaluation of SiO₂/4H-SiC Interfaces

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 289-292

Trans Tech Publications

Access to resources Recommend Favorite

Improvement of SiO₂/4H-SiC(0001) Interface Properties by H₂ and Ar Mixture Gas Treatment Prior to SiO₂ Deposition

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 461-464

Trans Tech Publications

Access to resources Recommend Favorite

Temperature-Dependence Study of the Gate Current SiO₂/4H-SiC MOS Capacitors

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 473-476

Trans Tech Publications

Access to resources Recommend Favorite