Improved Threshold Voltage Instability in 4H-SiC MOSFETs with Atomic Layer Deposited SiO₂

E-ISSN： 1662-9752|2018|924|498-501

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2018, Iss.924, 2018-07, pp. : 498-501

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