X-Ray Topography Analysis of 4H-SiC Crystals Grown by the High-Temperature Gas Source Method

Publisher： Trans Tech Publications

E-ISSN： 1662-9752|2018|924|180-183

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2018, Iss.924, 2018-07, pp. : 180-183

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