Direct Observation of Stress Relaxation Process in 4H-SiC Homoepitaxial Layers via In Situ Synchrotron X-Ray Topography

Publisher： Trans Tech Publications

E-ISSN： 1662-9752|2018|924|176-179

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2018, Iss.924, 2018-07, pp. : 176-179

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