Publisher： Trans Tech Publications
E-ISSN： 1662-9752|2018|924|633-636
ISSN： 0255-5476
Source： Materials Science Forum, Vol.2018, Iss.924, 2018-07, pp. : 633-636
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Depth Profiling of Carrier Lifetime in Thick 4H-SiC Epilayers Using Two-Photon Absorption
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :
Access to resources
Recommend
Lifetime Enhancement of 4H-SiC PiN Diodes Using High Temperature Oxidation Treatment
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :
Local Lifetime Control in 4H-SiC by Proton Irradiation
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :
Carrier Lifetimes in 4H-SiC Epitaxial Layers on the C-Face Enhanced by Carbon Implantation
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :
Performance and Reliability Impacts of Extended Epitaxial Defects on 4H-SiC Power Devices
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :