Carrier Lifetimes in 4H-SiC Epitaxial Layers on the C-Face Enhanced by Carbon Implantation

Publisher： Trans Tech Publications

E-ISSN： 1662-9752|2018|924|432-435

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2018, Iss.924, 2018-07, pp. : 432-435

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Hot Filament CVD Growth of 4H-SiC Epitaxial Layers

By  

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 120-123

Trans Tech Publications

Access to resources Recommend Favorite

Deep Level Defects in 4H-SiC Epitaxial Layers

By  

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 225-228

Trans Tech Publications

Access to resources Recommend Favorite

Kinetics Modeling of the Carbon Vacancy Thermal Equilibration in 4H-SiC

By  

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 233-236

Trans Tech Publications

Access to resources Recommend Favorite

High In-Wafer Uniformity of Growth Rate and Carrier Concentration on n-Type 4H-SiC Epitaxial Films Achieved by High Speed Wafer Rotation Vertical CVD Tool

By  

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 88-91

Trans Tech Publications

Access to resources Recommend Favorite

Performance and Reliability Impacts of Extended Epitaxial Defects on 4H-SiC Power Devices

By  

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 137-142

Trans Tech Publications

Access to resources Recommend Favorite