Effect of High Energy Electron Irradiation on Electrical and Noise Properties of 4H-SiC Schottky Diodes

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Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 605-608

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About the Electrical Activation of 1×10²⁰ cm^-3 Ion Implanted Al in 4H-SiC at Annealing Temperatures in the Range 1500 - 1950°C

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Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 333-338

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Fabrication of 2.5kV 4H-SiC PiN Diodes with High Energy Implantation (gt;12MeV) of Al⁺ and B⁺

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Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 573-576

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Ni-Al-Ti Ohmic Contacts with Preserved Form Factor and Few 10^{- 4} Ωcm² Specific Resistance on 0.1-1 Ωcm p-Type 4H-SiC

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Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 385-388

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Comparison of the Effects of Electron and Proton Irradiation on 4H-SiC and Si Device Structures

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Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 217-220

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