Ni-Al-Ti Ohmic Contacts with Preserved Form Factor and Few 10^- ⁴ Ωcm² Specific Resistance on 0.1-1 Ωcm p-Type 4H-SiC

E-ISSN： 1662-9752|2018|924|385-388

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2018, Iss.924, 2018-07, pp. : 385-388

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Effect of Electron Irradiation on Electrical and Electroluminescent Properties of n⁺p 4H-SiC Structures

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 257-260

Trans Tech Publications

Access to resources Recommend Favorite

About the Electrical Activation of 1×10²⁰ cm^-3 Ion Implanted Al in 4H-SiC at Annealing Temperatures in the Range 1500 - 1950°C

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 333-338

Trans Tech Publications

Access to resources Recommend Favorite

Fabrication of 2.5kV 4H-SiC PiN Diodes with High Energy Implantation (gt;12MeV) of Al⁺ and B⁺

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 573-576

Trans Tech Publications

Access to resources Recommend Favorite

Study of Ti/Al/Ni Ohmic Contacts to p-Type Implanted 4H-SiC

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 377-380

Trans Tech Publications

Access to resources Recommend Favorite

Rearrangement of Surface Structure of 4^o Off-Axis 4H-SiC (0001) Epitaxial Wafer by High Temperature Annealing in Si/Ar Ambient

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 249-252

Trans Tech Publications

Access to resources Recommend Favorite