Infrared Reflectance Study of the Graphene/Semi-Insulating 6H-SiC(0001) Heterostructure

Publisher： Trans Tech Publications

E-ISSN： 1662-9752|2018|924|314-317

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2018, Iss.924, 2018-07, pp. : 314-317

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

The Effects of Illumination on Point Defects Detected in High Purity Semi-Insulating 4H-SiC

By  

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 253-256

Trans Tech Publications

Access to resources Recommend Favorite

Ab Initio Theory of Si-Vacancy Quantum Bits in 4H and 6H-SiC

By  

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 895-900

Trans Tech Publications

Access to resources Recommend Favorite

Improvement of SiO2/4H-SiC(0001) Interface Properties by H2 and Ar Mixture Gas Treatment Prior to SiO2 Deposition

By  

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 461-464

Trans Tech Publications

Access to resources Recommend Favorite

Low Temperature Ni-Al Ohmic Contacts to p-Type 4H-SiC Using Semi-Salicide Processing

By  

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 389-392

Trans Tech Publications

Access to resources Recommend Favorite

Rearrangement of Surface Structure of 4o Off-Axis 4H-SiC (0001) Epitaxial Wafer by High Temperature Annealing in Si/Ar Ambient

By  

Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. : 249-252

Trans Tech Publications

Access to resources Recommend Favorite