Rearrangement of Surface Structure of 4o Off-Axis 4H-SiC (0001) Epitaxial Wafer by High Temperature Annealing in Si/Ar Ambient

Publisher： Trans Tech Publications

E-ISSN： 1662-9752|2018|924|249-252

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2018, Iss.924, 2018-07, pp. : 249-252

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