Publisher: Trans Tech Publications
E-ISSN: 1662-9752|2018|924|120-123
ISSN: 0255-5476
Source: Materials Science Forum, Vol.2018, Iss.924, 2018-07, pp. : 120-123
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
CVD Filling of Narrow Deep 4H-SiC Trenches in a Quasi-Selective Epitaxial Growth Mode
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :
Deep Level Defects in 4H-SiC Epitaxial Layers
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :
Growth of 150 mm 4H-SiC Epitaxial Layer by a Hot-Wall Reactor
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :
Glide of Basal Plane Dislocations during 150 mm 4H-SiC Epitaxial Growth by a Hot-Wall Reactor
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :