Publisher: Trans Tech Publications
E-ISSN: 1662-9752|2018|924|841-844
ISSN: 0255-5476
Source: Materials Science Forum, Vol.2018, Iss.924, 2018-07, pp. : 841-844
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
1.2 kV 4H-SiC Split-Gate Power MOSFET: Analysis and Experimental Results
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :
Effect of Design Variations and N2O Annealing on 1.7kV 4H-SiC Diodes
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :
Fabrication of 2.5kV 4H-SiC PiN Diodes with High Energy Implantation (gt;12MeV) of Al+ and B+
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :
Near Breakdown Voltage Optical Beam Induced Current (OBIC) on 4H-SiC Bipolar Diode
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :