Publisher： Trans Tech Publications
E-ISSN： 1662-9752|2018|924|261-264
ISSN： 0255-5476
Source： Materials Science Forum, Vol.2018, Iss.924, 2018-07, pp. : 261-264
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Quick and Practical Cleaning Process for Silicon Carbide Epitaxial Reactor
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :
Access to resources
Recommend
Metal/Semiconductor Contacts to Silicon Carbide: Physics and Technology
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :
Understanding the Chemistry in Silicon Carbide Chemical Vapor Deposition
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :
Hot Filament CVD Growth of 4H-SiC Epitaxial Layers
Materials Science Forum, Vol. 2018, Iss. 924, 2018-07 ,pp. :