Publisher: Edp Sciences
E-ISSN: 2267-1242|43|issue|01006-01006
ISSN: 2267-1242
Source: E3S Web of conferences, Vol.43, Iss.issue, 2018-06, pp. : 01006-01006
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Characterization of metastable defects in hydrogen-implanted n-type silicon
By Sugiyama T. Tokuda Y. Kanazawa S. Ishiko M.
EPJ Applied Physics (The), Vol. 27, Iss. 1-3, 2010-03 ,pp. :
p-type doping by platinum diffusion in low phosphorus doped silicon
By Ventura L. Pichaud B. Vervisch W. Lanois F.
EPJ Applied Physics (The), Vol. 23, Iss. 1, 2002-11 ,pp. :