Transformation behavior of metastable defects induced in n-type silicon by hydrogen implantation

Author: Tokuda Y.   Sugiyama T.   Kanazawa S.   Iwata H.   Ishiko M.  

Publisher: Edp Sciences

E-ISSN: 1286-0050|27|1-3|111-114

ISSN: 1286-0042

Source: EPJ Applied Physics (The), Vol.27, Iss.1-3, 2010-03, pp. : 111-114

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Abstract