Distribution of Dislocations near the Interface in AlN Crystals Grown on Evaporated SiC Substrates

By Argunova Tatiana S.   Gutkin Mikhail Yu.   Je Jung Ho   Kalmykov Alexander E.   Kazarova Olga P.   Mokhov Evgeniy N.   Mikaelyan Kristina N.   Myasoedov Alexander V.   Sorokin Lev M.   Shcherbachev Kirill D.  

Crystals, Vol. 7, Iss. 6, 2017-06 ,pp. : 163-163

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AlGaN/GaN MOS-HEMTs with Corona-Discharge Plasma Treatment

By Yuan Shuo-Huang   Chang Feng-Yeh   Wuu Dong-Sing   Horng Ray-Hua  

Crystals, Vol. 7, Iss. 5, 2017-05 ,pp. : 146-146

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Effects of Al and N₂ Flow Sequences on the Interface Formation of AlN on Sapphire by EVPE

By Kishimoto Katsuhiro   Funato Mitsuru   Kawakami Yoichi  

Crystals, Vol. 7, Iss. 5, 2017-04 ,pp. : 123-123

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The Effect of Trimethylaluminum Flow Rate on the Structure and Optical Properties of AlInGaN Quaternary Epilayers

By Wang Dongbo   Liu Gang   Jiao Shujie   Kong Lingping   Liu Teren   Liu Tong   Wang Jinzhong   Guo Fengyun   Luan Chunyang   Li Zhenghao  

Crystals, Vol. 7, Iss. 3, 2017-03 ,pp. : 69-69

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Transparency of Semi-Insulating, n-Type, and p-Type Ammonothermal GaN Substrates in the Near-Infrared, Mid-Infrared, and THz Spectral Range

By Kucharski Robert   Janicki Łukasz   Zajac Marcin   Welna Monika   Motyka Marcin   Skierbiszewski Czesław   Kudrawiec Robert  

Crystals, Vol. 7, Iss. 7, 2017-06 ,pp. : 187-187

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