Distribution of Dislocations near the Interface in AlN Crystals Grown on Evaporated SiC Substrates

By Argunova Tatiana S.   Gutkin Mikhail Yu.   Je Jung Ho   Kalmykov Alexander E.   Kazarova Olga P.   Mokhov Evgeniy N.   Mikaelyan Kristina N.   Myasoedov Alexander V.   Sorokin Lev M.   Shcherbachev Kirill D.  

Crystals, Vol. 7, Iss. 6, 2017-06 ,pp. : 163-163

MDPI

Access to resources Recommend Favorite

On the Role of AlN Insertion Layer in Stress Control of GaN on 150-mm Si (111) Substrate

By Lin Po-Jung   Tien Ching-Ho   Wang Tzu-Yu   Chen Che-Lin   Ou Sin-Liang   Chung Bu-Chin   Wuu Dong-Sing  

Crystals, Vol. 7, Iss. 5, 2017-05 ,pp. : 134-134

MDPI

Access to resources Recommend Favorite

The Effect of Trimethylaluminum Flow Rate on the Structure and Optical Properties of AlInGaN Quaternary Epilayers

By Wang Dongbo   Liu Gang   Jiao Shujie   Kong Lingping   Liu Teren   Liu Tong   Wang Jinzhong   Guo Fengyun   Luan Chunyang   Li Zhenghao  

Crystals, Vol. 7, Iss. 3, 2017-03 ,pp. : 69-69

MDPI

Access to resources Recommend Favorite

AlGaN/GaN MOS-HEMTs with Corona-Discharge Plasma Treatment

By Yuan Shuo-Huang   Chang Feng-Yeh   Wuu Dong-Sing   Horng Ray-Hua  

Crystals, Vol. 7, Iss. 5, 2017-05 ,pp. : 146-146

MDPI

Access to resources Recommend Favorite

Structure and Optical Properties of K_0.67Rb_1.33Al₂B₂O₇ Crystal

By Huang Qian   Liu Lijuan   Xia Mingjun   Yang Yi   Guo Shu   Wang Xiaoyang   Lin Zheshuai   Chen Chuangtian  

Crystals, Vol. 7, Iss. 4, 2017-04 ,pp. : 104-104

MDPI

Access to resources Recommend Favorite