A New Method to Fabricate Ge Nanowires: Selective Lateral Etching of Gesn:P/Ge Multi-Stacks

E-ISSN： 1662-9779|2018|282|113-118

ISSN： 1012-0394

Source： Solid State Phenomena, Vol.2018, Iss.282, 2018-10, pp. : 113-118

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