Comparative Characteristics of GaAs and InAs Langmuir Evaporation - Monte Carlo Simulation

E-ISSN： 1662-9507|2018|386|27-32

ISSN： 1012-0386

Source： Defect and Diffusion Forum, Vol.2018, Iss.386, 2018-11, pp. : 27-32

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Surface Orientation Influence on the Langmuir Evaporation Characteristics of GaAs Substrates

Defect and Diffusion Forum, Vol. 2018, Iss. 386, 2018-11 ,pp. : 21-26

Trans Tech Publications

Access to resources Recommend Favorite

Functional Characteristics of QD-InAs/GaAs Heterostructures with Potential Barriers AlGaAs and GaAs

Solid State Phenomena, Vol. 2018, Iss. 284, 2018-11 ,pp. : 182-187

Trans Tech Publications

Access to resources Recommend Favorite

Nanoscale Etching of GaAs and InP in Acidic H₂O₂ Solution: A Striking Contrast in Kinetics and Surface Chemistry

Solid State Phenomena, Vol. 2018, Iss. 282, 2018-10 ,pp. : 48-51

Trans Tech Publications

Access to resources Recommend Favorite

Ti/TiO₂, Au Electrodes Prepared by Plasma Electrolytic Oxidation and Electron Beam Evaporation

Defect and Diffusion Forum, Vol. 2018, Iss. 386, 2018-11 ,pp. : 326-331

Trans Tech Publications

Access to resources Recommend Favorite

Physico-Mechanical and Chemical Characteristics of Amber

Solid State Phenomena, Vol. 2018, Iss. 277, 2018-08 ,pp. : 80-89

Trans Tech Publications

Access to resources Recommend Favorite