Novel process for widening memory window of sub-200 nm ferroelectric-gate field-effect transistor by ferroelectric coating the gate-stack sidewall

Publisher： IOP Publishing

E-ISSN： 1361-6641|30|1|15024-15030

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.30, Iss.1, 2015-01, pp. : 15024-15030

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