Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors

Publisher： IOP Publishing

E-ISSN： 1741-4199|24|11|117103-117106

ISSN： 1674-1056

Source： Chinese Physics B, Vol.24, Iss.11, 2015-11, pp. : 117103-117106

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