Effect of Nitrogen-Doping on the Properties of Radiation Defect Centers in FZ Silicon

Publisher: Trans Tech Publications

E-ISSN: 1662-9779|2015|242|279-284

ISSN: 1012-0394

Source: Solid State Phenomena, Vol.2015, Iss.242, 2016-02, pp. : 279-7

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

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Abstract