Publisher: Trans Tech Publications
E-ISSN: 1662-9779|2014|219|256-259
ISSN: 1012-0394
Source: Solid State Phenomena, Vol.2014, Iss.219, 2014-01, pp. : 256-259
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Defects could be generated on the wafers by the particle contamination, formation of organic residue, corrosion, native oxide growth on the surface and airborne molecular contaminants (AMC) [1] etc. These problems hinder the device performance and also can decrease the yield and productivity in the semiconductor manufacturing process. It could be resolved by various cleaning methods [2]. However, the results such as corrosion, native oxide growth on wafer and AMC deposition should be handled properly by N2 gas purge prevention method during the process or standby [3,4]. It should be implemented before starting the process, which can maximize the productivity with a higher yield by minimizing the process queue and maintaining wafer surface integrity in sub 20 nm device fabrication.
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