Potential profile evaluation of a diamond lateral p–n junction diode using Kelvin probe force microscopy

By  

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, Iss. 11, 2015-11 ,pp. : 2589-2594

John Wiley & Sons Inc

Access to resources Recommend Favorite

High-quality p-n junction fabrication by ion implantation using the LPCVD amorphous silicon films

By Jaroszewicz B.   Budzynski T.   Panas A.   Kociubinski A.   Slysz W.   Jung W.   Jakiela R.   Barcz A.   Marczewski J.   Grabiec P.  

Vacuum, Vol. 70, Iss. 2, 2003-03 ,pp. : 81-85

Elsevier

Access to resources Recommend Favorite

Fabrication of heterostructure p- -Fe 0.95 Mn 0.05 Si 2 /n-Si diodes by Fe + and Mn + co-implantation in Si(100) substrates

By Katsumata H.   Makita Y.   Takada T.   Tanoue H.   Kobayashi N.   Hasegawa M.   Kakemoto H.   Tsukamoto T.   Uekusa S.  

Thin Solid Films, Vol. 381, Iss. 2, 2001-01 ,pp. : 244-250

Elsevier

Access to resources Recommend Favorite

Fabrication of transparent p-n junction composed of heteroepitaxially grown p-Li_0.15Ni_0.85O and n-ZnO films for UV-detector applications

By Zhuang L.   Wong K.H.  

Applied Physics A, Vol. 87, Iss. 4, 2007-06 ,pp. : 787-791

Springer Publishing Company

Access to resources Recommend Favorite

Van der Waals p–n Junction Based on an Organic–Inorganic Heterostructure

By  

ADVANCED FUNCTIONAL MATERIALS, Vol. 1616-301X, Iss. 36, 2015-09 ,pp. : 5865-5871

John Wiley & Sons Inc

Access to resources Recommend Favorite