The Unexpected Influence of Precursor Conversion Rate in the Synthesis of III–V Quantum Dots

By  

ANGEWANDTE CHEMIE, Vol. 127, Iss. 48, 2015-11 ,pp. : 14507-14511

John Wiley & Sons Inc

Access to resources Recommend Favorite

Homogeneous linewidth of self-assembled III-V quantum dots observed in single-dot photoluminescence

By Leosson K.   Birkedal D.   Magnusdottir I.   Langbein W.   Hvam J.M.  

Physica E, Vol. 17, Iss. unknown, 2003-04 ,pp. : 1-6

Elsevier

Access to resources Recommend Favorite

Ferromagnetic Properties of Mn-Doped III–V Semiconductor Quantum Wells

By Kim N.  

Journal of Superconductivity: Incorporating Novel Magnetism, Vol. 18, Iss. 2, 2005-04 ,pp. : 189-193

Springer Publishing Company

Access to resources Recommend Favorite

Room-temperature, high-deposition-rate, plasma-enhanced chemical vapour deposition of silicon oxynitride thin films producing low surface damage on lattice-matched and pseudomorphic III-V quantum-well structures

By Sah R.E.   Ralston J.D.   Eichin G.   Dischler B.   Rothemund W.   Wagner J.   Larkins E.C.   Baumann H.  

Thin Solid Films, Vol. 259, Iss. 2, 1995-04 ,pp. : 225-230

Elsevier

Access to resources Recommend Favorite

Quantum beat phenomenon due to polariton in III-V and IV-IV semiconductors doped with quantum dot

By Singh M.R.   Mukherji D.  

Physica E, Vol. 17, Iss. unknown, 2003-04 ,pp. : 406-409

Elsevier

Access to resources Recommend Favorite