Low Thermal Budget Ohmic Contact Formation by Laser Anneal

E-ISSN： 1662-9752|2016|858|565-568

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 565-568

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Low Resistance Ohmic Contact Formation on 4H-SiC C-Face with NbNi Silicidation Using Nanosecond Laser Annealing

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 549-552

Trans Tech Publications

Access to resources Recommend Favorite

Low temperature poly-Si TFT-LCD by excimer laser anneal

By Uchikoga S. Ibaraki N.

Thin Solid Films, Vol. 383, Iss. 1, 2001-02 ,pp. : 19-24

Elsevier

Access to resources Recommend Favorite

Controlled Low‐Frequency Electrical Noise of Monolayer MoS₂ with Ohmic Contact and Tunable Carrier Concentration

ADVANCED ELECTRONIC MATERIALS, Vol. 4, Iss. 1, 2018-01 ,pp. : n/a-n/a

John Wiley & Sons Inc

Access to resources Recommend Favorite

Silicidation reactions with Co-Ni bilayers for low thermal budget microelectronic applications

By Saha S.K. Howell R.S. Hatalis M.K.

Thin Solid Films, Vol. 347, Iss. 1, 1999-06 ,pp. : 278-283

Elsevier

Access to resources Recommend Favorite

Low Resistance Ti-Si-C Ohmic Contacts for 4H-SiC Power Devices Using Laser Annealing

Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 399-402

Trans Tech Publications

Access to resources Recommend Favorite